采用溶胶-凝胶技术,蒸发诱导自组装法(EISA)工艺制备了二氧化硅透明有序介孔薄膜。以十六烷基三甲基溴化铵(CTAB)作为模板剂,正硅酸乙酯(TEOS)为硅源前驱体,基片采用双面抛光的硅片,利用提拉法制备薄膜。经过表面修饰剂六甲基二硅胺烷(HMDS)修饰后,薄膜具有疏水性能,而且薄膜的二氧化硅骨架结构更稳定。由椭偏仪测得热处理后的薄膜的折射率低至1.18,而薄膜的介电常数为2.14。 Silica transparent ordered mesoporous films were prepared by sol-gel technique and evaporation-induced self-assembly method (EISA). Cetyltrimethylammonium bromide (CTAB) was used as a template and tetraethoxysilane (TEOS) was used as a precursor of silicon source. The substrate was polished by double-sided polishing and the film was prepared by Czochralski method. After the surface modifier hexamethyldisilazane (HMDS) modified, the film has hydrophobic properties, and the film’s silica skeleton structure more stable. The refractive index of the heat-treated film as measured by ellipsometry was as low as 1.18 and the dielectric constant of the film was 2.14.