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利用射频磁控溅射的方法,在Si(111)衬底上制备了LiNbO3薄膜。采用X射线衍射(XRD)和扫描电子显微镜(SEM)研究了衬底温度、退火温度和溅射气体压强对LiNbO3薄膜结晶和表面形貌的影响,并用椭圆偏振仪测量了薄膜的厚度和折射率。结果表明:衬底温度为450℃时制备的薄膜,退火前后都没有LiNbO3相生成;衬底温度为500～600℃时,LiNbO3薄膜出现(012)、(104)和(116)面衍射峰,经600℃退火后3个衍射峰的强度加强;衬底温度为600℃时,经600～900℃退火得到的LiNbO3薄膜,除出现(012)、(104)和(116)面衍射峰外,还出现(006)面衍射峰;溅射气体压强从0.8 Pa增大到2.4 Pa时,经800℃退火后得到的LiNbO3薄膜表面晶粒团簇变小,而0.8 Pa制备的薄膜经800℃退火后LiNbO3相的结晶程度较其它压强下完善;900℃退火后得到的LiNbO3薄膜折射率为2.25,与LiNbO3晶体相当。
Using RF magnetron sputtering method, LiNbO3 thin films were prepared on Si (111) substrate. The effects of substrate temperature, annealing temperature and sputtering gas pressure on the crystallization and surface morphology of LiNbO3 thin films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The thickness and refractive index of the films were measured by ellipsometer . The results show that there is no LiNbO3 phase before and after annealed at 450 ℃ and diffraction peaks of (012), (104) and (116) appear at LiNbO3 film at 500-600 ℃, After annealing at 600 ℃, the intensities of the three diffraction peaks were enhanced. In addition to the diffraction peaks of (012), (104) and (116), the LiNbO3 thin films annealed at 600-900 ℃ at 600 ℃, (006) surface diffraction peaks appeared. When the pressure of sputtering gas was increased from 0.8 Pa to 2.4 Pa, the grain size of the LiNbO3 thin films annealed at 800 ℃ became smaller and the films prepared at 0.8 Pa annealed at 800 ℃ The crystallinity of LiNbO3 phase is better than that of other compressive strength. The refractive index of LiNbO3 thin film annealed at 900 ℃ is 2.25, which is comparable to that of LiNbO3 crystal.