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报导了一种用无定形半导体做的、在 300MC 下通断高频讯号的开关。所用的材料是Si_3 Ga_4 AS_(38) Te(55),切割成为1 mm~3的样品。开关转换是通过加上 100μs、300V 的脉冲来实现的,同时观察到了小于 1μs 的开关时间。
Reported a switch made of amorphous semiconductors to turn on and off high frequency signals at 300MC. The material used is Si_3 Ga_4 AS_ (38) Te (55), cut into 1 mm ~ 3 samples. Switching is accomplished by adding pulses of 100μs, 300V while switching times of less than 1μs are observed.