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利用自洽迭代数值计算方法,对多发射极微波功率SiGe HBT芯片热电耦合特性进行了模拟和分析。结果表明,通过对晶体管发射极条长、条间距的调整,可以有效地改善芯片温度分布的不均匀性,提高晶体管的热稳定性和功率处理能力。
The self-consistent iterative numerical method was used to simulate and analyze the thermoelectric coupling characteristics of multi-emitter microwave power SiGe HBT chips. The results show that by adjusting the emitter emitter length and stripe spacing, the inhomogeneity of the chip temperature distribution can be effectively improved and the thermal stability and power handling capability of the transistor can be improved.