运用光刻技术和原子力显微技术(AFM)研究了亚硫酸根离子对硅和二氧化硅在40％(w)氟化铵水溶液中腐蚀速率的影响.结果表明硅和二氧化硅的腐蚀速率和亚硫酸根离子浓度有关.高分辨X射线光电子能谱(XPS)分析在有/没有亚硫酸根的溶液中腐蚀后的硅和二氧化硅表面氟元素的结果表明在这两种溶液中腐蚀得到的表面化学成分是有差别的.实验结果证明亚硫酸根离子在硅和二氧化硅的湿腐蚀中不只是表现为一种除氧剂,还干预了表面腐蚀反应过程. The effect of sulfite on the corrosion rate of silicon and silicon dioxide in 40% (w) ammonium fluoride aqueous solution was investigated by photolithography and atomic force microscopy (AFM). The results show that the corrosion rate of silicon and silicon dioxide And the concentration of sulfite ion.The results of high resolution X-ray photoelectron spectroscopy (XPS) analysis of the fluorine element on the silicon and silica surface after etching in the solution with / without sulfite showed that corrosion in both solutions The resulting surface chemical composition is different.Experimental results show that sulfite ions do not only behave as an oxygen scavenger in the wet etching of silicon and silica, but also interfere with the surface corrosion reaction process.