论文部分内容阅读
在超高真空分子束外延 (MBE)生长技术中 ,反射式高能电子衍射仪 (RHEED)能实时显示半导体和金属外延生长过程 ,给出薄膜表面结构和平整度的信息 ,成为MBE必备的原位表面分析仪 .为了研究氧化物薄膜如高温超导(YBa2 Cu3 O7)、铁电薄膜 (Sr1 -xBaxTiO3 )及它们的同质和异质外延结构的生长机理 ,获得高质量的符合各种应用需要的氧化物多层薄膜结构 ,在常规的制备氧化物薄膜的脉冲激光沉积 (PLD)设备上配备适合在高气压制膜条件下使用的高气压反射式高能电子衍射仪 (high pressureRHEED) ,在国内首先实现氧化物薄膜生长过程的实时监控 .详细介绍了高气压反射式高能电子衍射仪的结构和特性 ,给出了碳酸锶 (SrTiO3 )基片上同质外延碳酸锶铌 (SrTiO3 +2 %Nb)和异质外延钇钡铜氧 (Y1 Ba2 Cu3 O7)薄膜生长过程中衍射图形和零级衍射强度震荡 .
In ultra-high vacuum molecular beam epitaxy (MBE) growth technology, reflective high-energy electron diffraction (RHEED) real-time display of semiconductor and metal epitaxial growth process, given the thin film surface structure and flatness information, MBE essential In order to investigate the growth mechanism of oxide films such as high temperature superconducting (YBa2 Cu3 O7), ferroelectric thin films (Sr1-xBaxTiO3) and their homo- and heteroepitaxial structures, high-quality, The oxide multi-layer thin film structure required is provided on a conventional pulse laser deposition (PLD) apparatus for preparing oxide thin films with a high pressure RHD suitable for use under high atmospheric pressure conditions, The domestic first real-time monitoring of the oxide film growth process is described in detail.The structure and properties of the high pressure reflective high energy electron diffractometer are introduced in detail.The homogeneously strontium niobate (SrTiO3 + 2% Nb ) And heteroepitaxial yttrium barium copper oxide (Y1 Ba2 Cu3 O7) films during the diffraction pattern and zero-order diffraction intensity oscillations.