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采用紧束缚的重整化方法计算了超晶格（ＧｅｘＳｉ１－ｘ）１／（Ｓｉ）ｍ（００１）的基本带隙及其导带底在布里渊区中的位置在Ｘ＝０．０１～０．１范围内随Ｘ的变化情况以及当Ｘ＝０．０１时随硅层层数ｍ的变化情况。计算结果表明，在ｘ＝０．０１～０．１范围内，ｘ对导带底位置基本上没有影响，导带底位置主要由硅层层数ｍ决定，并可根据布里渊区折叠计算得到。由此提出，可以制成类似于（ＧｅｘＳｉ１－ｘ）１／（Ｓｉ）ｍ（００１）形式的超晶格，而获得准直接能隙结构的材料，以提高其光的发射和检测能力。关键词：
The basic band gap of the superlattice (GexSi1-x) 1 / (Si) m (001) and the position of its conduction band in the Brillouin zone are calculated using the tight-binding renormalization method at X = 0.01 ~ 0.1 range with X changes and when X = 0.01 with the silicon layer layer m changes. The calculated results show that x has no influence on the bottom position of the conduction band in the range of x = 0.01 ~ 0.1. The bottom of the conduction band is mainly determined by the number of layers m of the silicon layer and can be calculated according to the folding of the Brillouin zone get. It is thus proposed that a superlattice similar to the (GexSi1-x) 1 / (Si) m (001) form can be made to obtain a quasi direct energy gap structure material to enhance its light emission and detection ability. Key words: