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在利用高密度线性阵列探测器成像时,探测阵列单元间的串扰将直接影响器件的成像质量。文章对厚度为100μm的背照式PIN光电探测器线性阵列的电串扰特性进行了分析,通过Silvaco TCAD器件仿真软件对阵列的暗电流和光电流进行了仿真,分析了像元间的电串扰特性,同时对比分析了保护环结构对器件的暗电流和电串扰特性的影响。仿真结果表明,保护环结构器件的暗电流和电串扰性能均优于无保护环的结构,在有保护环时PIN器件的串扰是无保护环结构的1/5。
When using high-density linear array detectors to image, detecting crosstalk between array elements directly affects the imaging quality of the device. In this paper, the electrical crosstalk characteristics of a linear array of back-illuminated PIN photodetectors with a thickness of 100μm are analyzed. The dark current and photocurrent of the array are simulated by Silvaco TCAD device simulation software. The characteristics of electrical crosstalk between pixels are analyzed. At the same time, the influence of guard ring structure on the dark current and electrical crosstalk characteristics of the device is analyzed. The simulation results show that the structure of the protective ring device is better than the non-structured ring structure in terms of dark current and electrical crosstalk. The crosstalk of the PIN device with the guard ring is 1/5 of the unprotected ring structure.