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基于一种新的湿法刻蚀条件和新型的凸角补偿结构,以KOH溶液为腐蚀液,对单晶(100)Si材料进行了湿法刻蚀,获得了表面平整和凸角完整的刻蚀结果,制作了用于微模塑工艺的硅基阳模,并成功地用于聚甲基乙烯基硅氧烷微分析芯片的制作上。
Based on a new wet etching condition and a new type of lobe compensation structure, single-crystal (100) Si material was wet-etched with KOH solution as etching solution, and the surface smoothness and complete lobe engraved As a result, a silicon-based positive mold for a micro-molding process was produced and successfully used in the production of a polymethylvinylsiloxane microanalysis chip.