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The P+ a-SiC∶H/N+ poly-Si solar cell is simulated by an AMPS-1D device simulator to characterize the new thin film polycrystalline-silicon solar cell. In order to analyze the characteristics of the device,the thickness,working temperature,and impurity concentration for the N+ polysilicon layer are considered.The results show that the performance of the cells shows little change when the thickness of N+ polysilicon varies from 10 to 30 μm.It is concluded that the P+ a-SiC∶H/N+ poly-Si solar cell has the highest performance with high open circuit voltages (Voc) of 1.31 V,high conversion efficiency of 17.363％ and high fill factor of 0.884.Therefore,the P+ a-SiC∶H/N+ poly-Si solar cell has promising future applications.