本文介绍利用环形双电子枪制备非晶硅太阳电池用ITO/SnO_2双层透明导电膜新工艺。在最佳条件下制备的该膜的薄层电阻达6.1Ω/□,可见光范围的透过率大于90％,载流子浓度为1.0×10~(21)cm~(-3)。实验表明,当膜层厚为200～300A时,就可有效阻挡ITO膜中的In向a-Si:H中扩散。 This article describes the use of a ring dual electron gun for the preparation of amorphous silicon solar cells ITO / SnO_2 double transparent conductive film new technology. The film prepared under the best conditions has a sheet resistance of 6.1Ω / □, a visible light transmittance greater than 90% and a carrier concentration of 1.0 × 10 ~ (21) cm ~ (-3). Experiments show that when the film thickness is 200 ~ 300A, it can effectively block the ITO film from diffusing to a-Si: H.