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在低频FET放大器中,电阻反馈是一种卓有成效的方法,采用这种方法能同时获得好的超宽带增益平坦度和输入、输出电压驻波比。与简单的匹配电路相结合,这种电阻反馈电路可以设计通用目的实用放大器,其芯片面积要比用通常的匹配技术的芯片面积小得多。本文所描述的电路芯片面积为1.5×1.5mm,频率为5MHz～2GHz,增益为10dB±1dB,极好的输入和输出电压驻波比,饱和输出功率大于+20dBm。最小噪声偏置下的噪声系数近似2dB,相关增益为9dB。
In low-frequency FET amplifiers, resistive feedback is an effective way to achieve good UWB gain flatness and input and output VSWR at the same time. In combination with a simple matching circuit, this resistive feedback circuit can be used to design a general-purpose, practical amplifier with a chip area that is much smaller than the chip area used with conventional matching techniques. The circuit chip described in this paper has an area of 1.5 × 1.5mm, a frequency of 5MHz ~ 2GHz and a gain of 10dB ± 1dB. Excellent input and output VSWR and saturation output power greater than + 20dBm. The noise figure under the minimum noise bias is approximately 2 dB with a correlation gain of 9 dB.