论文部分内容阅读
叙述了围绕第三代红外焦平面的需求所进行的HgCdTe分子束外延的一些研究结果.75 mm HgCdTe薄膜材料的组分均匀性良好,80K下截止波长偏差为0 .1μm.对所观察到的HgCdTe表面缺陷成核机制进行了分析讨论,获得的75mm HgCdTe材料平均表面缺陷密度低于300cm-2.研究发现As的表面黏附系数很低,对生长温度十分敏感,在170℃下约为1×10-4.计算表明,As在HgCdTe中的激活能为19.5meV,且随(Na∑Nd)1/3的增大呈线性下降关系,反比系数为3.1×10-5meV·cm.实验发现Hg饱和蒸汽压下,对应不同的温度240,380,440℃,As在HgCdTe中的扩散系数分别为(1.0±0.9)×10-16,(8±3)×10-15,(1.5±0.9)×10-13cm2/s .采用分子束外延生长的HgCdTe材料已用于红外焦平面探测器件的研制,文中报道了一些初步结果.
Some results of HgCdTe molecular beam epitaxy based on the requirements of the third generation of infrared focal plane are described.The component uniformity of the 75 mm HgCdTe thin film material is good and the deviation of the cutoff wavelength at 80K is 0.1μm. HgCdTe surface defects nucleation mechanism was analyzed and discussed, the average surface defect density of the obtained 75mm HgCdTe material is less than 300cm-2.Study found that the surface adhesion coefficient of As is very low, very sensitive to the growth temperature, at 170 ℃ about 1 × 10-4. The calculation shows that the activation energy of As in HgCdTe is 19.5meV, and decreases linearly with the increase of (NaΣNd) 1/3, and the inverse ratio coefficient is 3.1 × 10-5meV · cm. It is found that Hg The diffusion coefficients of As in HgCdTe were (1.0 ± 0.9) × 10-16, (8 ± 3) × 10-15, (1.5 ± 0.9) × 10-13cm2 / s. The HgCdTe material grown by molecular beam epitaxy has been used in the development of infrared focal plane detection devices. Some preliminary results have been reported.