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近三年来,可替代功率MOSFET器件的基于氮化镓晶体管产品系列已非常广阔(参考文献1)。除了优异的传导性能外,这些新一代器件的开关速度比传统硅器件要快十倍。这些卓越的特性不仅催生了许多新应用,同时对封装和热管理方面的要求也更为严格。本文主要讨论在高功率密度系统中,使用触点阵列(LandGridArray/LGA)封装的高性能增强型eGaNFET所具有的优势,以及如何面对在热管理方面所遇到的挑战。
In recent three years, the family of GaN-based transistors that can replace power MOSFET devices is already vast (Reference 1). In addition to excellent conductivity, these next-generation devices switch ten times faster than conventional silicon devices. These outstanding features have not only spawned many new applications, but also more stringent packaging and thermal management requirements. This article focuses on the benefits of high performance enhanced eGaNFETs packaged in a LandGridArray / LGA package and how they face the challenges of thermal management in high power density systems.