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分别在550和800℃对CVT方法生长的非掺ZnO单晶进行闭管磷扩散.通过Hall测试、X射线光电子谱(XPS)、光致发光(PL)以及喇曼散射对扩散后的样品进行测试分析.发现扩散掺杂后的ZnO单晶仍显示n型导电性,自由电子浓度比非掺样品增高,在800℃扩散后尤为明显.PL测试结果表明,掺杂样品在420~550nm范围的可见光发射与缺陷有关.XPS测试表明:在550℃掺杂,P原子更易代替Zn位;在800℃扩散时,P未占据Zn位,而似乎占据了O位.最终在磷扩散后的ZnO单晶中形成了高浓度的浅施主缺陷,造成了自由电子的显著增加.
The closed-tube phosphorus diffusion was performed on CVT-grown non-doped ZnO single crystals at 550 and 800 ° C. The diffused samples were subjected to X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman scattering It is found that the diffusion-doped ZnO single crystals still show n-type conductivity and the free electron concentration is higher than that of the non-doped samples, especially after being diffused at 800 ° C. The PL test results show that the doped samples are in the range of 420-550 nm The visible light emission is related to the defects.The XPS test shows that the P atom is more likely to replace the Zn atom at 550 ℃ and the P atom does not occupy the Zn site at 800 ℃, The formation of high concentrations of shallow donor defect, resulting in a significant increase in free electrons.