论文部分内容阅读
阐述了一种外延沉积化合物半导体的新方法———电化学原子层外延（ＥＣＡＬＥ），并对其基础欠电势沉积（ＵＰＤ）进行了讨论．着重研究了Ⅱ、Ⅳ族元素Ｃｄ、Ｔｅ的电化学欠电势沉积，根据电化学循环伏安曲线，研究了Ｔｅ与Ｃｄ在ＳｉＡｕ（１１１）基片上以及交替生长过程中ＵＰＤ沉积电位及相应覆盖度值．由此确定了在ＳｉＡｕ（１１１）衬底上交替沉积Ｔｅ、Ｃｄ原子层的方法．在此基础上，初步进行了多次交替沉积，并用ＡＦＭ与ＡＥＳ研究了所得样品表面形貌与成分．
A new method for the epitaxial deposition of compound semiconductors, E-CALE, is described, and its basic underpotential deposition (UPD) is discussed. The electrochemical underpotential deposition of Cd and Te in group Ⅱ and Ⅳ is studied emphatically. According to electrochemical cyclic voltammetry, the effects of Te and Cd on the SiAu (111) substrate and the UPD deposition potential and its corresponding Coverage value. Thus, the method of alternately depositing Te and Cd atomic layers on SiAu (111) substrate was established. On the basis of this, a lot of alternate depositions were carried out initially, and the surface morphology and composition of the obtained samples were studied by AFM and AES.