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用溶胶-凝胶法制备了低k多孔SiO2:F薄膜,用空间电荷限制电流法(SCLC)研究了多孔SiO2:F薄膜中的隙态密度以及掺F量对隙态密度的影响,得到了平衡费米能级附近的隙态密度约为7×1015cm-3·eV-1,以及带隙中隙态随能量的分布.并对造成隙态的主要原因也进行了讨论.
The low-k porous SiO2: F thin films were prepared by sol-gel method. The space density of charge in the porous SiO2: F thin films and the effect of the doped amount of F on the gap density were investigated by space charge limiting current method (SCLC) The gap density near the equilibrium Fermi level is about 7 × 10 15 cm -3 · eV -1, and the distribution of the gap states along with the energy in the bandgap is also discussed. The main reason for the gap formation is also discussed.