利用金属有机物化学气相淀积技术在蓝宝石衬底上生长了InGaN/GaN量子阱结构.研究了引入n型InGaN薄层或InGaN/GaN超晶格层的量子阱特性,结果表明通过引入n型InGaN薄层或InGaN/GaN超晶格层缓解了量子阱有源区中的应力,改善了多量子阱表面形貌,减少了V型缺陷密度,而且提高了多量子阱的光致发光强度,从而也改进了LED的发光效率. InGaN / GaN quantum well structure was grown on sapphire substrate by metal-organic chemical vapor deposition technique.The quantum well characteristics introduced into n-type InGaN thin film or InGaN / GaN superlattice layer were investigated.The results show that by introducing n-type InGaN The thin layer or InGaN / GaN superlattice layer alleviates the stress in the active region of the quantum well, improves the surface morphology of the multiple quantum well, reduces the V-type defect density, and increases the photoluminescence intensity of the multiple quantum well, thereby Also improve the luminous efficiency of LED.