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金属饱和Hg_(0.8)Cd_(0.4)Te的(p-n)值和P_(H(?))值可用一简单的非简并半导体模型来适配,这种半导体包含有双离子化的固有施主和受主,以及浓度为1~4×10~(15)cm~(-3)的外来施主。所得到的参数与室温的禁带宽度和本征载流子浓度的现有值相一致,也与考虑了计算的电离杂质散射后所需要的高度补偿相符合。这些参数是: log_(10)n_i=-1118/T+13.76+1.5logT logP_(H(?))(本征)=-4850/T+7.926 logk_2~(1/2)=-4032/T+21.52
The (pn) and P_ (H (?)) Values of the metal-saturated Hg_ (0.8) Cd_ (0.4) Te can be adapted using a simple nondegenerate semiconductor model that contains a dual ionized intrinsic donor and Recipient, and foreign donor at a concentration of 1 ~ 4 × 10 ~ (15) cm ~ (-3). The obtained parameters are in agreement with the existing values of the forbidden band width and the intrinsic carrier concentration at room temperature and also with the height compensation needed after accounting for the calculated scattering of ionized impurities. These parameters are: log_ (10) n_i = -1118 / T + 13.76 + 1.5logT logP_ (H (?)) (Intrinsic) = - 4850 / T + 7.926 logk_2 ~ (1/2) = -4032 / T + 21.52