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目前采用的N-沟道硅栅工艺的新的单元的设计,使得MOS随机存储器容量更大,密度更高,可以与磁心和双极型存储器相竞争。对计算机设计者得到的好处是N-沟道比P沟道随机存储器速度较快,而与同样大小的双极型存储器一样快。特别是简化再生只用0.01％的占空比可对整个存储器全部再生,使存储器能无形再生,无需存储器占线时间,并且在某些应用中,存储器全然不需要再生;存储单元的设计,使之功耗减小到磁心或双极的一小部分,去掉了时序和控制所必需的设备,诸如寻址再生、维持控制或预充,这样,大大降低了整个系统的成本(N-沟道MOS随机存储器每位的成本与P-沟道的相同)。
The new cell design of the currently used N-channel silicon gate technology allows MOS random memory to have a larger capacity and higher density to compete with a magnetic core and a bipolar memory. The benefit to computer designers is that N-channel is faster than P-channel random access memory and as fast as a bipolar memory of the same size. In particular, the simplified reproduction allows the entire memory to be completely regenerated with a duty cycle of 0.01%, allowing the memory to be invisible, eliminating the need for memory busy time, and in some applications the memory does not need to be regenerated at all; the memory cell is designed so that Reducing power consumption to a fraction of the core or bipolar eliminates the need for timing and control of devices such as address regeneration, sustain control, or precharge, which greatly reduces overall system cost (N-channel MOS Random memory cost per bit is the same as P-channel).