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MOS大规模集成电路(MOS LSI)与分离半导体器件和中规模组件电路一样共同都有很多可靠性问题。但是,由于MOS LSI 电路增加了复杂程度,有较大的芯片尺寸和较高的集成度,需要采取不同的途径来解决。需要在设计者、生产者和使用者(即可靠性的三方面关系)之间有一种密切的工作关系来获得生产上的控制、测试方法和评定可靠性的步骤,同时使MOS LSI 电路的性能和可靠性都最佳化,采用这个办法后,一个每根外接端平均有很多功能的MOS LSI 电路,就能做出一个更可靠的系统(这是与一个同样复杂程度但基于分离器件或较少复杂程度的集成电路相比较而言)。本文对可靠性的一些特殊领域(如图案灵敏性、生产控制、装配、封装和电性能测试等均进行了讨论。
MOS LSIs have many reliability issues in common with the separation of semiconductor devices and medium-scale component circuits. However, due to the complexity of the MOS LSI circuit, larger chip size and higher integration, different approaches need to be taken to solve the problem. There is a need to have a close working relationship between designers, producers and users (ie, the three aspects of reliability) in order to gain control of production, test methods, and steps to assess reliability while maximizing the performance of MOS LSI circuits And reliability are optimized, with this approach, an MOS LSI circuit with a large number of functions on each external terminal makes it possible to make a more reliable system (this is the same complexity as a separate device or based on Less complex integrated circuits). This article discusses some of the specific areas of reliability such as pattern sensitivity, manufacturing control, assembly, packaging, and electrical performance testing.