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采用C,Si和SiO2为反应原料,利用直流电弧法制备出长直的β-SiC纳米线。纳米线的直径为100～200nm,长度为10～20μm,并且沿着<111>方向生长。通过X射线衍射(XRD)、扫描电子显微术(SEM)、透射电子显微术(TEM)、拉曼光谱等手段,对β-SiC纳米线进行表征。探讨了β-SiC纳米线自催化气-液-固(VLS)生长机制。
The long straight β-SiC nanowires were prepared by direct current arc method using C, Si and SiO2 as reaction raw materials. The nanowires have a diameter of 100-200 nm and a length of 10-20 μm, and grow in the <111> direction. The β-SiC nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy. The mechanism of β-SiC nanowire autocatalytic gas-liquid-solid (VLS) growth was discussed.