利用透射电镜对掺氮(NCZ)和普通(CZ)直拉硅单晶中的原生氧沉淀进行研究.研究表明,在NCZ样品中,有高密度的粒径为5nm的氧沉淀生成,而在CZ样品中,没有观察到这种氧沉淀.初步认为,这种细小的氧沉淀是以650℃低温下形成的N-O复合体为核心在随后的冷却过程中形成. Transmission electron microscopy (TEM) was used to study the primary oxygen precipitation in NCZ and CZ Czochralski silicon single crystals, and the results show that in the NCZ samples, oxygen precipitates with a high density of 5 nm were formed, This oxygen precipitation was not observed in the CZ sample, and it was preliminarily believed that this fine oxygen precipitate was formed during the subsequent cooling with the NO complex formed at a low temperature of 650 ° C as the core.