论文部分内容阅读
针对触发器在纳米级工艺下容易受空间辐射中单粒子效应的影响而产生软错误的情况,基于CPSH触发器结构,研究了一种对单粒子效应中SET/SEU加固的延时采样软错误防护(DSSEP)触发器结构。该触发器由延时采样单元、输入传输单元、软错误鲁棒存储锁存器和反相输出单元组成。延时采样单元对来自其他逻辑电路的输出数据进行采样,采样数据经输入传输单元写入软错误鲁棒存储锁存器,并通过一个反相输出单元输出。仿真结果表明,DSSEP触发器具有很好的SET/SEU加固能力。经过比较和分析,证明DSSEP触发器与具有同样SET/SEU加固能力的保护门触发器(GGFF)相比,在晶体管数目和传播延时方面仅为GGFF的62%和33%。
In view of the fact that the flip-flop is susceptible to single-shot effect in space radiation under the nanoscale process, a soft error is caused by delay sampling of the SET / SEU reinforcement in the single-particle effect based on the CPSH flip-flop structure Protection (DSSEP) trigger structure. The flip-flop consists of a delay sampling unit, an input transfer unit, a soft error robust storage latch and an inverting output unit. The delay sampling unit samples output data from other logic circuits, and the sampled data is written to the soft error robust storage latch via the input transfer unit and output through an inverting output unit. The simulation results show that the DSSEP trigger has good SET / SEU reinforcement capability. After comparison and analysis, the DSSEP flip-flop is demonstrated to be 62% and 33% of the GGFF in terms of the number of transistors and the propagation delay compared to the gate-trigger with the same SET / SEU reinforcement (GGFF).