基于碳纳米管的场效应晶体管技术源于1998年,在随后的近10年间p型(空穴型)场效应晶体管的制备技术日趋完善,其性能全面超过相对应的硅基场效应晶体管.最近北京大学研究组关于高性能室温弹道n型(电子型)碳纳米管场效应晶体管的研究为基于碳纳米管的CMOS(complementary metal-oxide-semiconductor)技术的腾飞装上了另一个翅膀.特别是这种技术无需掺杂,加上碳纳米管特殊的几何和电子结构使得基于碳纳米管的CMOS技术有望突破传统微电子工艺所面临的一些根本性的困难,为下一步实现基于碳纳米管的纳电子电路的规模集成奠定了基础. The field-effect transistor technology based on carbon nanotubes originated in 1998, and in the following 10 years, the preparation technology of p-type (hole-type) field-effect transistor has been perfected and its performance surpass that of the corresponding silicon-based field effect transistor Peking University research group on high-performance room temperature ballistic n-type (electronic) carbon nanotube field effect transistor based on the carbon nanotube-based CMOS (complementary metal-oxide-semiconductor) technology to take off another mounted wings, especially This technology without doping, coupled with the special geometry and electronic structure of carbon nanotubes makes the carbon nanotube-based CMOS technology is expected to break through some of the fundamental difficulties of traditional microelectronics process for the next step to achieve based on carbon nanotubes The scale of electronic circuit integration laid the foundation.