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本文在研究IMOS器件结构的基础上,分析了该器件不同区域的表面电场,结合雪崩击穿条件,建立了P-IMOS的阈值电压解析模型.应用MATLAB对该器件阈值电压模型与源漏电压、栅长和硅层厚度的关系进行了数值分析,并用二维器件仿真工具ISE进行了验证.结果表明,源电压越大,阈值电压值越小;栅长所占比例越大,阈值电压值越小,硅层厚度越小,阈值电压值越小.本文提出的模型与ISE仿真结果一致,也与文献报道符合.这种新型高速半导体器件IMOS阈值电压解析模型的建立为该高性能器件及对应电路的设计、仿真和制造提供了重要的参考.
Based on the study of the structure of IMOS device, the surface electric field in different regions of the device is analyzed, and the threshold voltage analysis model of P-IMOS is established based on the avalanche breakdown condition.The threshold voltage model of the device, Gate length and thickness of the silicon layer are numerically analyzed and verified by a two-dimensional device simulation tool ISE.The results show that the larger the source voltage is, the smaller the threshold voltage is and the larger the proportion of the gate length is, the greater the threshold voltage is The smaller the thickness of the silicon layer, the smaller the threshold voltage value.The model proposed in this paper is consistent with the ISE simulation results reported in the literature.The establishment of this new high-speed semiconductor device IMOS threshold voltage analysis model for the high-performance devices and their corresponding Circuit design, simulation and manufacturing provide an important reference.