论文部分内容阅读
东芝公司考虑到杂质碳使FET闽值电压产生偏差的作用比位错大得多,就采取了两种途径来减少碳的沾污,开发出了本文这种GaAs晶体生长技术。两种途径是,向熔液水平施加3400奥斯特的强磁场,以控制对流;把碳炉体材料改换成AIN材料和用热解氮化硼覆盖加热器。其结果提高了整个晶锭的均匀性。使制作在整个3英寸片子上的FET阅值电压偏差小于20mV,而且能从3kg晶锭上切出70～80片大圆片。由于阈值电压偏差要比市售晶体的小一半,所以有可能制作出更高速的GaAs LSI。还由于制作成本仅比过去的非掺杂LEC的高10％左右,所以有利于GaAs LSI的批量生产。
Toshiba took into account the impurity carbon FET FET voltage deviation than the role of much greater than the dislocation, taken two ways to reduce the carbon contamination, developed this GaAs crystal growth technology. Both approaches were to apply a strong magnetic field of 3400 Oersteds to the melt level to control the convection; the carbon furnace material was changed to AIN material and the heaters were covered with pyrolytic boron nitride. As a result, the uniformity of the entire ingot is improved. So that the production of the entire 3-inch FET FET reading voltage deviation of less than 20mV, but also cut from 3kg ingot 70 to 80 large wafer. Since the threshold voltage deviation is smaller than that of a commercially available crystal, it is possible to fabricate a higher-speed GaAs LSI. Moreover, since the fabrication cost is only about 10% higher than that of the conventional undoped LEC, it is advantageous for the mass production of the GaAs LSI.