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设计了以石墨烯作为可饱和吸收体的被动调Q掺钕钇铝石榴石晶体(Nd∶YAG)微片激光器。该激光器采用三明治结构,附有石墨烯薄层的YAG晶体紧密压贴于工作物质Nd∶YAG晶体上,晶体端面镀膜作为端面镜构成平行平面谐振腔。采用光纤耦合输出激光二极管端面抽运技术,利用石墨烯的可饱和吸收作用,在注入功率为1.17W时实现微片激光器的调Q运转,获得波长1064.6nm,重复频率300～807kHz可调,最小脉冲宽度75ns的激光输出。激光器最大输出功率38.4mW,最大单脉冲能量54.7nJ。
Passive Q-switched Nd: YAG garnet (Nd: YAG) microchip lasers with graphene as a saturable absorber were designed. The laser uses a sandwich structure. The YAG crystal with a thin layer of graphene is pressed tightly against the Nd:YAG crystal of the working substance. The crystal end face coating forms a parallel plane resonant cavity as the end mirror. A fiber-coupled laser diode end-pumped technique was used to achieve the Q-switched operation of the microchip laser with a graphene saturable absorption at a power of 1.17 W, with a wavelength of 1064.6 nm and a repetition frequency of 300 to 807 kHz, Pulse width 75ns laser output. The maximum laser output power of 38.4mW, the maximum single pulse energy 54.7nJ.