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本文从分析普通N~+/P(或P~+/N)结硅光伏二极管的短波响应限制机理出发,介绍一种用于提高短波量子效率的新结构敏紫硅光伏二极管——氧化层电荷感应高低结(以下缩写为OCI-HLJ)硅光伏二极管.实验结果表明,OCI-HLJ结构,可以明显地增强硅光伏二极管在蓝紫和紫外方面的光量子效率.在波长为365nm时,OCI-HLJ硅光伏二极管的光谱响应度达0.23μA/μW,在253nm的紫外光处,仍具有很高的光谱灵敏度.OCI-HLJ结构,是制作敏紫硅光电器件的一种切实可行的新型结构.
Based on the analysis of the short-wave response limit mechanism of common N ~ + / P (or P ~ + / N) -conjunction silicon photodiode, this paper introduces a new structure sensitive silicon photodiode-oxide charge (OCI-HLJ) silicon photodiode with high and low inductive junction.The experimental results show that the OCI-HLJ structure can significantly enhance the photon quantum efficiency of silicon photodiode in blue violet and ultraviolet.When the wavelength is 365nm, OCI-HLJ The spectral responsivity of silicon photodiode reaches 0.23μA / μW, which still has high spectral sensitivity at 253nm.OCL-HLJ structure is a feasible new structure for making sensitive purple silicon photoelectric device.