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5. Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientatio

Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientatio

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：yangyiwenabc

【摘 要】

：

Atomic layer thin two dimensional material has attracted great attention since graphene was isolated by Geim and Novoselov in 2004.Hexagonal boron nitride(h-BN),an insulator with a large band gap(~5.9

【作 者】

：

Xiuju Song Zhongfan Liu 

【机 构】

：

Peking University,Beijing 100871,China

【出 处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年5期

【关键词】

：

hexagonal boron nitride chemical vapor deposition Cu foil domain size orientatio 

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　　Atomic layer thin two dimensional material has attracted great attention since graphene was isolated by Geim and Novoselov in 2004.Hexagonal boron nitride(h-BN),an insulator with a large band gap(~5.97eV),possesses a similar lattice structure and a tiny lattice mismatch(1.7%)compared with graphene.

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