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  5. Application of nitride-based semiconductor materials to high-speed optoelectronics

Application of nitride-based semiconductor materials to high-speed optoelectronics

来源 :The 4th Advances in Optoelectronics and Micro/nano-optics (A | 被引量 : 0次 | 上传用户：flyliubo
【摘 要】
：
Ⅲ-nitrides materials are very promising ternary alloy system that receives a lot of attentions thanks to theirs tunable bandgap that varies from near infrared to near ultraviolet regions.
【作 者】
：
E.Dogheche I.P Seetoh B.ALSHEHRI K.DOGHECHE J.H.Teng S.J.Chua D.Decoster 
【机 构】
：
Institute of Electronics,Microelectronics and Nanotechnology,UMR-CNRS 8520,Avenue Poincar(e),59652 V
【出 处】
：
The 4th Advances in Optoelectronics and Micro/nano-optics (A
【发表日期】
：
2014年5期
【关键词】
：
Indium gallium nitride refractive index electrooptic surface plasmon optoelectro 
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　　Ⅲ-nitrides materials are very promising ternary alloy system that receives a lot of attentions thanks to theirs tunable bandgap that varies from near infrared to near ultraviolet regions.
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