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  5. Method for improving etch depth uniformity via dynamic leaf

Method for improving etch depth uniformity via dynamic leaf

来源 :The 4th Advances in Optoelectronics and Micro/nano-optics (A | 被引量 : 0次 | 上传用户：luzhenning
【摘 要】
：
Broad beam ion sources have been widely applied to the fabrication of large-aperture diffraction gratings,even though the uniformity of ionbeam current density is hardly guaranteed.Tuning ion source p
【作 者】
：
Lixiang Wu Keqiang Qiu Shaojun Fu 
【机 构】
：
National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei,China,
【出 处】
：
The 4th Advances in Optoelectronics and Micro/nano-optics (A
【发表日期】
：
2014年5期
【关键词】
：
etch depth uniformity dynamic leaf dwell time algorithm 
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　　Broad beam ion sources have been widely applied to the fabrication of large-aperture diffraction gratings,even though the uniformity of ionbeam current density is hardly guaranteed.Tuning ion source parameters and mounting correction masks are two common approaches to obtain a moreuniform distribution of beam current density.
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