Roughness Effects on Phonon Transport Across and Along the Interface between Two Materials Bonding w

来源 :The 2nd International Conference on Phononics and thermal En | 被引量 : 0次 | 上传用户:shan43512
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  A non-equilibrium molecular dynamics simulation model is established to investigate the impact of vdW strength on thermal transport along the in-plane and out-plane directions in bi-layer films(BLFs).Si films and multilayer graphene sheets are both investigated.Lennard-Jones and Stillinger-Weber potential are used to describe the interaction between Si-Si atoms belong to different films and those belong to the same film.Lennard-Jones potential is used to describe the vdW interactions of the atoms belong to different thin films both for the multilayer graphene and silicon BLFs.It is demonstrated that higher strength leads to a higher possibility for phonons to pass through the vdW interface and hence larger in-plane thermal conductivities.However,interface roughness also increases with the continuous increase of the vdW strength and leads to the reduction of thermal conductivities.In our model,diffusion factors for phonon scattering on boundaries are investigated.Based on the MD model,we demonstrate a method of precisely manipulating the interfacial thermal conductance(ITC)between graphene and metal.It is demonstrated that graphene/metal interfacial thermal conductance can be tuned through adjusting the bonding strength.
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