Mobility enhancement of strained GaSb p-channel metal-oxide-semiconductor field-effect transistors w

来源 :中国物理学会2015年秋季会议 | 被引量 : 0次 | 上传用户:hhttllzzwei
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  High mobility Ⅲ-Ⅴ semiconductors have attracted a great deal of interest for future high performance metal-oxide-semiconductor field-effect transistors,considered as candidates to replace strained-Si.
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