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本文介绍了一款频段44GHz~46GHz,采用对极鳍线微带过渡结构的功率放大器设计方法。本文对对极鳍线微带过渡结构进行模拟仿真并测试背靠背结构的插入损耗,其插入损耗在44GHz~46GHz频段内小于2d B。电路设计中采用金丝键合工艺连接裸片与微带电路,并用HFSS对其进行仿真。选用2W裸片进行装配,测试结果表明在44GHz~46GHz频段内,饱和功率输出1.3W以上,增益大于13d B,效率在8%以上。以此模块为基本单元电路,利用功率合成技术完成Q波段高功率放大器单机的设计。
This article presents a design method for a power amplifier with a frequency band of 44 GHz to 46 GHz using a microstrip transition structure on the pole fins. In this paper, we simulate the microstrip transition structure of the pole fins and test the insertion loss of the back-to-back structure. The insertion loss is less than 2d B in the 44GHz ~ 46GHz frequency band. Circuit design using gold wire bonding process to connect the die and the microstrip circuit, and use HFSS to simulate it. The test results show that in the 44GHz ~ 46GHz frequency band, the saturated power output of 1.3W or more, the gain greater than 13d B, the efficiency of 8% or more. With this module as the basic unit circuit, the single-power Q-band high power amplifier is designed using power synthesis technology.