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Creation of nanodots on silicon surface induced by highly charged xenon ions
【机 构】
：
Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;Graduate University of
【出 处】
：
第四届国际表面与界面科学与工程学术会议(The Fourth International Conference on S
【发表日期】
：
2009年12期
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