By applying the on-site Coulomb interaction(Hubbard term U)onto the Ti d-orbital,the influence of electron localization on the electronic structure as well as the transport of oxygen vacancy(Vo)in rutile was investigated.With U=4.5 eV,the positions of defect states in the band gap were correctly reproduced,contrasting to the metallic property of Vo-contained rutile obtained by using traditional GGA functional.