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HIGH PERFORMANCE InGaN LASER DIODE WITH AN IMPROVED CARRIER CONFINEMENT USING AlGaN/GaN MULTI-QUANTU
【机 构】
:
Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia
【出 处】
:
International Meeting on Frontiers of Physics 2009(第三届国际物理前沿
【发表日期】
:
2009年4期
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