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5. A Novel Direct band gap SiGe Phase:First-principle Calculation

A Novel Direct band gap SiGe Phase:First-principle Calculation

来源 :第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna | 被引量 : 0次 | 上传用户：chung51

【摘 要】

：

SiGe is commonly used as a semiconductor material with excellent electronic and optical properties.SiGe alloy is also a kind of excellent high temperature thermoelectric materials.

【作 者】

：

Penghui Li Chao Liu Mengdong Ma Yilong Pan Zhisheng Zhao Julong He 

【机 构】

：

State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 0

【出 处】

：

第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna

【发表日期】

：

2017年10期

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　　SiGe is commonly used as a semiconductor material with excellent electronic and optical properties.SiGe alloy is also a kind of excellent high temperature thermoelectric materials.

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