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微波滤波器作为通信、雷达等系统中重要的选频元件,其性能好坏将直接影响整个通信系统的性能[1]。滤波器的高性能、小型化是目前主要的研制目标。本文介绍了C波段双层微机械(Micro-Electro-Mechanical System,MEMS)滤波器,采用抽头交指结构,采用电感耦合等离子(Inductively Coupled Plasma,ICP)深硅刻蚀和金-金键合工艺实现封闭谐振腔,大大减少了体积和辐射损耗。滤波器中心频率为4.1GHz,,相对带宽15%,驻波小于1.5,3.2GHz&5GH处抑制大于45 d B。芯片尺寸为7 mm×7.8 mm×0.8 mm。本文给出了该滤波器的具体制作流程。实物测试结果表明,获得的MEMS滤波器的测试结果与仿真结果基本一致。
Microwave filters as communications, radar and other important frequency-selective components in the system, its performance will directly affect the performance of the entire communication system [1]. The high-performance filter, miniaturization is the main goal of development. In this paper, the C-band MEMS (Micro-Electro-Mechanical System) filter is introduced. The tapped interdigitated structure is adopted. The inductively coupled plasma (ICP) deep silicon etching and gold- Resonator, greatly reducing the volume and radiation losses. The center frequency of the filter is 4.1GHz, the relative bandwidth is 15%, the standing wave is less than 1.5, and the suppression is greater than 45d at 5.2GHz and 5GHz. The chip size is 7 mm × 7.8 mm × 0.8 mm. This article gives the filter of the specific production process. The physical test results show that the obtained MEMS filter test results and simulation results are basically the same.