Flexible electronics has drawn increasing attentions in recent years for its unique characteristics such as bendability,attachable to uneven surfaces,light weight,etc.To transform the traditional semiconductor electtronics based on rigid silicon wafer onto flexible substrates(such as plastic substrate),the techniques of releasing single-crystalline silicon nanomemebranes(SiNM)from silicon-on-insulator(SOI)source substrates and transferring it onto the flexible substrates are demonstrated(as shown in Fig.1)[1,2].Using this transfer technique,we have realized a series of radio-frequency flexible nanomembrance devices/circuits,examples including spiral inductors and capacitors,p-i-n diodes,switches,thin-film transistors,etc.[1-4].Furthermore,effort has been done to investigate their performance variations under various bending conditions [2-4].The radio-frequency/microwave equivalent circuit models have been developed and achieve good agreement with the experimental results.The models reveal the most influential factors for the flexible radio-frequency devices with mechanical bending strains [2-3].Underlying mechanisms have been discussed by theoretical and simulation analysis.These works have provided useful guidelines for designing the flexible monolithic microwave integrated systems.