【摘 要】
：
Copper has been proposed as a new material for metallization in Si-based semiconductor devices due to its low resistivity,high chemical stability,and excellent electromigration resistance.In this pape
【机 构】
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School of Materials Science and Engineering,Southwest Jiaotong University,Key Laboratory of Advanced
【出 处】
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2015 Shanghai Thin Film Conference(2015上海薄膜国际会议)
论文部分内容阅读
Copper has been proposed as a new material for metallization in Si-based semiconductor devices due to its low resistivity,high chemical stability,and excellent electromigration resistance.In this paper,in order to improving the properties of Cu thin films further,the films were deposited on Si(100)substrate with different bias voltage by high power pulsed magnetron sputtering(HPPMS).
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