【摘 要】
：
Resistive switching behaviour has been intensively studied in oxides[1,2].In oxides,it is well known that oxygen vacancies play an important role in the resistive switching behaviour[3].The oxygen vac
【机 构】
：
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc
【出 处】
：
2015 Shanghai Thin Film Conference(2015上海薄膜国际会议)
论文部分内容阅读
Resistive switching behaviour has been intensively studied in oxides[1,2].In oxides,it is well known that oxygen vacancies play an important role in the resistive switching behaviour[3].The oxygen vacancies can be created in single crystal by annealing processes,such as annealing in vacuum or in inert gas atmosphere.So the annealing process is significant for the investigation of resistive switching.In present work,the single crystal SrTiO3(STO)was annealed by laser.Compared to vacuum annealing or annealing in inert gas atmosphere,using laser annealing,the sample can be locally heated to a high enough temperature while other part of the sample still maintain a low temperature.So laser annealing can be compatible with other processes and avoid the damage of other part of the sample caused by the heat.In addition,it can be controlled to only have effects on the specific area in the sample.The single crystal STO was annealed by laser with the laser energy of 0.6 J/cm2.After the laser annealing,Ti/Pt was sputtered on the surface of the single crystal and the electrodes were formed by lithography.The planar structure of Pt/Ti/STO/Ti/Pt was formed.The area of the single electrode was 0.01 mm2.The distance between the adjacent electrodes was 5 lμin.The resistive switching behaviour was observed between the adjacent planar electrodes at the voltage of 7 V.This can be ascribe to the generation of oxygen vacancies by laser annealing.This work proved that the resistive switching behaviour can be achieved in single crystal STO by using laser annealing to creat oxygen vacancies,which provides a new path to make the single crystal or single crystalline thin film show the resistive switching behaviour.And this work is also beneficial for the understanding of the mechanism of resistive switching and its application.
其他文献
We design and fabricate a simple micro-system to collect analyte molecules in the fluids for surface-enhanced Raman scattering detection.The system is based on catalytic Au/SiO/Ti/Ag microengines by e
Ferroelectric random access memory is still challenging in the feature of combination of room temperature stability,non-destructive readout and high intensity storage.As a non-contact and non-destruct
Nano-scale domain structures in multiferroic(or ferroelectric)thin films have emerged as a golden mine for novel phenomena and functionalities due to the strongly coupled lattice,charge and spin degre
Amongst the available amorphous semiconductors that are suitable for large-area and flexible electronics,IGZO has shown the most potential due to its high electron mobility and low-temperature film de
Realization of magnetization reversal at a nanoscale by employing an electrical field is extremely important for the development of various spintronic devices.Several ways to control the magnetization
Low-dimensional oxide structures have remarkable properties that can be tuned by external fields.Particularly,based on the perovskite ABO3(111)surfaces,the so-called double perovskite A2BBO6 structure
In recent years,resistive switching(RS)effect has attracted considerable attention due to its scientific interest and important applications [1-3].It has been emphasized that a robust and predictive u
Electrolyte gating with ionic liquid has attracted significant attention as a powerful tool for greatly modulating the physical properties in a variety of materials.However,for electrolyte gating in t
Recently,atomic layer deposition(ALD)has been adopted in the surface modifications of nanoparticles with controllable dense and uniform nanoscale coating.Up to now,several kinds of equipment designs,i
Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide on(111)p-type silicon wafers within a versatile high vacuum laser deposition system.Pressure,target temperat