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Novel Degradation Model of Thin Gate OxideInduced by VUV Photons During High Density Plasma Oxide De
【机 构】
:
Semiconductor R&D center,Samsung Electronics Co.LTD,San 316 Banwol-dong,Hwasung-City Gyeonggi-Do 445
【出 处】
:
The 8th Asian-European International Conference on Plasma Su
【发表日期】
:
2011年1期
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