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Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate
【机 构】
：
TayebMohammed-BrahinandEmmanuelJacques(UniversityofRennes1,France)SoutheastUniversity,P.R.China
【出 处】
：
2016年第10届国际传感技术大会(2016 The 10th International Conference on
【发表日期】
：
2016年11期
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