Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sen sors, superconductors, supercapacitors, nanoelectron ics, and spintronics.A bottleneck is the capability to control the carrier type and density by doping.We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by highenergy at om/ion bombardment and fill these vacancies with de sired dopants.Different elements (Pt, Co, and In) have been successfully doped in the single-atom form.