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5. ASSESSMENT OF APPROXIMATIONS FOR EFFICIENT TOPOGRAPHY SIMULATION OF ION BEAM PROCESSES

ASSESSMENT OF APPROXIMATIONS FOR EFFICIENT TOPOGRAPHY SIMULATION OF ION BEAM PROCESSES

来源 :9th International Conference on Computer Siumlaation of Radi | 被引量 : 0次 | 上传用户：slyde

【作 者】

：

Gerhard Hobler Matthias Budil Christoph Ebm 

【机 构】

：

InstituteofSolidStateElectronics,ViennaUniversityofTechnology,A-1040Vienna,AustrialMSNanofabrication

【出 处】

：

9th International Conference on Computer Siumlaation of Radi

【发表日期】

：

2008年10期

【关键词】

：

Focused ion beam gas-assisted etching gas-assisted deposition binary collision s 

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