论文部分内容阅读
Highly(100) oriented (Pb 1-x-yLaxCay)Ti 1-x/4O3(x=0.15,y=0.05,x=0.1 ,y=0.1 ,x=0.05,y=0.15) thin films on Pt/Ti/SiO2/Si substrate were successfully achieved using a sol-gel route, it was found that the (Pbl-x-yLaxCay)Til-x/4O3 film could be crystallized only at 450 ℃, and the influence of La and Ca contents on dielectric and pyroelectric properties of films was investigated, the dielectric constant of (Pbl-x-yLaxCay)Til-x/4O3 film became smaller with the decreasing of La content, and the (Pbl-x-yLaxCay)Til-x/4O3 (x=0.1,y=0.1) film possessed higher pyroelectric coefficient (190μC/m2K annealed at 450 ℃, 359μC/m2K annealed at 600 ℃) and better pyroelectric figure of merit (76μC/m2K annealed at 450 ℃, 211 μC/m2K annealed at 600 ℃) at room temperature.This indicates that the highly oriented (Pbl-x-yLaxCay)Til-x/4O3 (x=0.1,y=0.1) film annealed at low temperature (450℃) is a good candidate for uncooled IR detector or IR imaging application.