论文部分内容阅读
Development and application of semiconductor silicon materials
【机 构】
:
Luoyang Ship Material Research Institute
【出 处】
:
The 2nd International Syposium on Innovations in Advanced Ma
【发表日期】
:
2008年1期
其他文献
Observation of Ferroelectric Domain Structure of Mg-doped Lithium Niobate(Mg:LN)and Stoichiometric L
Luminescence Properties of Ce3+,Eu2+,Tb3+,Tm3+ or Dy3+ Activated M3(PO4)2(M=Sr,Ba)under X-ray and UV
会议
Preparation and Characterization of Multiférroic 0.7 BiFeO3-0.3 BaTiO3 Thin Films by Pulsed Laser De