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The establishment of a 100-mm (4-in) gallium arsenide (GaAs) epitaxial facility is described together with the development of very high efficiency calibration process and a manufacturing capacity of over 5000 wafers/annum.The demand for MBE system for microwave devices is discussed, together with the relationship between material properties and devices.Post measurements and qualification control are described, as well as the recent process development by the utilization of production MBE system to support the device process for microwave products.Finally the talk describes the future growth for GaAs wafer production.